Pressure-induced phase transition and electrical properties of thermoelectric Al-doped Mg2Si
نویسندگان
چکیده
منابع مشابه
Pressure-induced metallization in Mg2Si
Mg2Si with narrow band gap has attracted increasing interest for its great potential applications. Theoretical calculations have predicted the metallization of Mg2Si under high pressure. In this work, the electrical resistance and Raman spectrum measurements of semiconducting Mg2Si were performed to investigate the metallization of Mg2Si by using diamond anvil cells and strip opposite anvils. A...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2015
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.4933069